3-D modeling and simulation of crystal growth of GE₀.₉₈ Si₀.₀₂ under the influence of various gravity levels, G-jitter and rotating magnetic field using traveling solvent method

Mehdi Mohammadi Shemirani, Ryerson University

Date of Award

2008

Degree Type

Thesis

Degree Name

Master of Applied Science (MASc)

Department

Mechanical Engineering

First Advisor

Ziad Saghir

Abstract

A three-dimensional numerical simulation was conducted to study the effect of a rotating magnetic (RMF) field on the fluid flow, heat transfer and mass transfer in the presence of various gravity levels by utilizing the traveling solvent method (TSM). The presence of the RMF suppressed the buoyancy convection in the GE₀.₉₈ Si₀.₀₂ solution zone in order to get homogeneity with a flat growth interface. It was found that the intensity of the flow at the centre of the crucible decreased at a faster rate compared to the flow near the walls when increasing magnetic field intensity is combined with a certain rotational speed.

This behavior created a stable and uniform silicon distribution in the horizontal plane near the growth interface in the terrestrial condition. Different magnetic field intensities for different rotational speeds were examined in both terrestrial and micro-gravity conditions. The effects of residual acceleration, known as G-jitter, on board the International Space Station and European Space Orbiter were also investigated.